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| IRL2203NPBF |
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| IRL2203NPBF是IR的一款MOS管|IGBT|模塊,我司不但為您提供可靠的全新原裝IRL2203NPBF，還可提供IRL2203NPBF應(yīng)用資料、免費(fèi)樣品及產(chǎn)品研發(fā)技術(shù)支持！詳情可致電垂詢. | | 元件型號(hào)：IRL2203NPBF | | 元件品牌：IR |
| 全新原裝正品保障，質(zhì)量是企業(yè)的生命！ |
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Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free IRL2203NPBF Description：
Advanced HEXFETfi Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.屬性Attributes Table | Fet Type | N-Ch | | No of Channels | 1 | | Drain-to-Source Voltage [Vdss] | 30V | | Drain-Source On Resistance-Max | 7mΩ | | Rated Power Dissipation | 180|W | | Qg Gate Charge | 60nC | | Gate-Source Voltage-Max [Vgss] | 16V | | Drain Current | 116A | | Turn-on Delay Time | 11ns | | Turn-off Delay Time | 23ns | | Rise Time | 160ns | | Fall Time | 66ns | | Operating Temp Range | -55°C to +175°C | | Gate Source Threshold | 1V | | Technology | Si | | Input Capacitance | 3290pF |
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