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Silicon N-Channel Power MOSFET
CS6N70A3D-G
○R Huajing Discrete Devices

General Description：
CS6N70A3D-G, the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce
the conduction loss, improve switching performance and enhance
the avalanche energy. The transistor can be used in various power
switching circuit for systemminiaturization and higher efficiency.
The package form is TO-251, which accords with the RoHS standard.

CS6N70A3D Features：
* Fast Switching
* ESD Improved Capability
* Low Gate Charge (Typical Data:15.5nC)
* Low Reverse transfer capacitances(Typical:6pF)
* 100%Single Pulse avalanche energy Test

CS6N70A3D Applications：
Power switch circuit of adaptor and charger.