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CS6N80A8R 是華晶的一款6A 800V高壓MOS管,東森微電子專業(yè)代理CS6N80A8R,并可提供電路設(shè)計(jì) 程序開發(fā)等技術(shù)支持,可開具增票.

CS6N80A8R the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the
conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with
the RoHS standard.
CS6N80A8R Features：
* Fast Switching
* Low ON Resistance(Rdson≤2.2?)
* Low Gate Charge (Typical Data:35nC)
* Low Reverse transfer capacitances(Typical:15pF)
* 100% Single Pulse avalanche energy Test
CS6N80A8R Applications：
Atx Power、LED Power.